类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q100 |
包裹: | Tray |
零件状态: | Discontinued at Digi-Key |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - DDR3L |
内存大小: | 4Gb (512M x 8) |
内存接口: | Parallel |
时钟频率: | 800 MHz |
写周期时间 - 字,页: | 15ns |
访问时间: | 20 ns |
电压 - 电源: | 1.283V ~ 1.45V |
工作温度: | -40°C ~ 105°C (TC) |
安装类型: | Surface Mount |
包/箱: | 78-TFBGA |
供应商设备包: | 78-FBGA (9x10.5) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
70V657S15BC8Renesas Electronics America |
IC SRAM 1.125MBIT PAR 256CABGA |
|
IS61LF204836B-7.5TQLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 72MBIT PARALLEL 100LQFP |
|
S-24CS01AFT-TB-GABLIC U.S.A. Inc. |
IC EEPROM 1KBIT I2C 8TSSOP |
|
NM24C04ENRochester Electronics |
IC EEPROM 4KBIT I2C 100KHZ 8DIP |
|
70V7319S166BC8Renesas Electronics America |
IC SRAM 4.5MBIT PAR 256CABGA |
|
S-93C46BD0I-K8T3UABLIC U.S.A. Inc. |
IC EEPROM 1KBIT SPI 2MHZ 8TMSOP |
|
IS61VPS102418B-200TQLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 100LQFP |
|
70V639S12BFGIRenesas Electronics America |
IC SRAM 2.25MBIT PAR 208FPBGA |
|
IS43R16320F-6TLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PAR 66TSOP II |
|
S25FL512SDPMFVG10Cypress Semiconductor |
IC FLASH 512MBIT SPI/QUAD 16SOIC |
|
GS81302QT37GE-300IGSI Technology |
IC SRAM 144MBIT PAR 165FPBGA |
|
MT28EW01GABA1HPC-0AATMicron Technology |
IC FLASH 1GBIT PARALLEL 64LBGA |
|
S29AS016J70BFI043Cypress Semiconductor |
IC FLASH 16MBIT PARALLEL 48FBGA |