类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Not For New Designs |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH |
内存大小: | 16Mb (528 Bytes x 4096 pages) |
内存接口: | SPI |
时钟频率: | 85 MHz |
写周期时间 - 字,页: | 8µs, 4ms |
访问时间: | - |
电压 - 电源: | 2.5V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TC) |
安装类型: | Surface Mount |
包/箱: | 8-SOIC (0.154", 3.90mm Width) |
供应商设备包: | 8-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CAT25256YI-GT3Sanyo Semiconductor/ON Semiconductor |
IC EEPROM 256KBIT SPI 8TSSOP |
|
NM93C66LZM8XRochester Electronics |
EEPROM, 256X16, SERIAL, CMOS |
|
ACE1501EMT8Rochester Electronics |
8-BIT, EEPROM, ACE1502 CPU |
|
BR24S16NUX-WTRROHM Semiconductor |
IC EEPROM 16K I2C VSON008X2030 |
|
70V3589S166BC8Renesas Electronics America |
IC SRAM 2MBIT PARALLEL 256CABGA |
|
CY62136VLL-55BAITRochester Electronics |
STANDARD SRAM, 128KX16 |
|
MX66L1G55GXDI-10GMacronix |
IC FLASH 1GBIT SPI/QUAD 24BGA |
|
IS45S16320F-7CTLA1ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PAR 54TSOP II |
|
AS4C8M32SA-7BCNTRAlliance Memory, Inc. |
IC DRAM 256MBIT PARALLEL 90TFBGA |
|
25LC256-H/SNRoving Networks / Microchip Technology |
IC EEPROM 256KBIT SPI 5MHZ 8SOIC |
|
S-24CS64A0I-J8T1GABLIC U.S.A. Inc. |
IC EEPROM 64KBIT I2C 400KHZ 8SOP |
|
GD25Q16CTEGRGigaDevice |
IC FLASH 16MBIT SPI/QUAD 8SOP |
|
71V3556S166PFGI8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |