类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q100 |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - DDR3L |
内存大小: | 1Gb (64M x 16) |
内存接口: | Parallel |
时钟频率: | 933 MHz |
写周期时间 - 字,页: | 15ns |
访问时间: | 20 ns |
电压 - 电源: | 1.283V ~ 1.45V |
工作温度: | -40°C ~ 95°C (TC) |
安装类型: | Surface Mount |
包/箱: | 96-TFBGA |
供应商设备包: | 96-TWBGA (9x13) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MT29F4G08ABBDAHC-IT:D TRMicron Technology |
IC FLASH 4GBIT PARALLEL 63VFBGA |
|
CY7C1018CV33-12VIRochester Electronics |
128K X 8 CPG, 3.3V 300MIL 32SOJ |
|
RM25C256C-LSNI-BAdesto Technologies |
IC CBRAM 256KBIT SPI 10MHZ 8SOIC |
|
7025L15PFG8Renesas Electronics America |
IC SRAM 128KBIT PARALLEL 100TQFP |
|
IS61NLP12832A-200TQLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
MB85RS2MTYPNF-G-AWERE2Fujitsu Electronics America, Inc. |
IC FRAM 2MBIT SPI 50MHZ 8SOP |
|
CY7C1568KV18-450BZXCRochester Electronics |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
IS61WV12816BLL-12TLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 2MBIT PARALLEL 44TSOP II |
|
25LC040AT-E/MCRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 10MHZ 8DFN |
|
CY7C1041GE30-10ZSXITCypress Semiconductor |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
71V35761SA183BGI8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
MX25L51245GMI-10GMacronix |
IC FLASH 512MBIT SPI/QUAD 16SOP |
|
CY62167G30-45BVXATCypress Semiconductor |
IC SRAM 16MBIT PARALLEL 48VFBGA |