类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Dual Port, Asynchronous |
内存大小: | 64Kb (8K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 15ns |
访问时间: | 15 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 68-LCC (J-Lead) |
供应商设备包: | 68-PLCC (24.21x24.21) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CY7C1470BV25-167AXCCypress Semiconductor |
NO WARRANTY |
|
CY7C1520KV18-333BZXIRochester Electronics |
DDR SRAM, 2MX36, 0.45NS PBGA165 |
|
AS7C32096A-10TCNTRAlliance Memory, Inc. |
IC SRAM 2MBIT PARALLEL 44TSOP2 |
|
CY7C1041GN-10VXICypress Semiconductor |
IC SRAM 4MBIT PARALLEL 44SOJ |
|
AT45DB081E-SSHN-TAdesto Technologies |
IC FLASH 8MBIT SPI 85MHZ 8SOIC |
|
MT29F64G08CBABBWP-12IT:B TRMicron Technology |
IC FLASH 64GBIT PAR 48TSOP I |
|
AS4C16M16D1A-5TCNAlliance Memory, Inc. |
IC DRAM 256MBIT PAR 66TSOP II |
|
CY7C199CN-20VCRochester Electronics |
STANDARD SRAM, 32KX8, 20NS |
|
S29GL512T10FHI040Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 64FBGA |
|
N08L6182AB27IRochester Electronics |
IC SRAM 8MBIT PARALLEL 48BGA |
|
CY7C1568KV18-400BZCRochester Electronics |
DDR SRAM, 4MX18, 0.45NS, CMOS, P |
|
S25FL129P0XMFI000Flip Electronics |
IC FLASH 128MBIT SPI/QUAD 16SOIC |
|
S34ML01G100TFI000Rochester Electronics |
FLASH, 128MX8, 25NS, PDSO48 |