English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Synchronous, QDR II+ |
| 内存大小: | 36Mb (1M x 36) |
| 内存接口: | Parallel |
| 时钟频率: | 400 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | - |
| 电压 - 电源: | 1.7V ~ 1.9V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 165-LBGA |
| 供应商设备包: | 165-FBGA (13x15) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
BR24S256F-WE2ROHM Semiconductor |
IC EEPROM 256KBIT I2C 8SOP |
|
DS1230Y-200IND+Maxim Integrated |
IC NVSRAM 256KBIT PAR 28EDIP |
|
IS25LQ020B-JNLE-TRISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 2MBIT SPI/QUAD 8SOIC |
|
S70GL02GS12FHB020Cypress Semiconductor |
IC FLASH 2GBIT PARALLEL 64FBGA |
|
MB85RS2MLYPNF-GS-AWE2Fujitsu Electronics America, Inc. |
IC FRAM 2MBIT SPI 50MHZ 8SOP |
|
MX29GL512FHXFI-10QMacronix |
IC FLSH 512MBIT PARALLEL 64LFBGA |
|
11AA161-I/PRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SGL WIRE 8DIP |
|
AS6C1616-55TINLTRAlliance Memory, Inc. |
IC SRAM 16MBIT PARALLEL 48TSOP I |
|
IS42S16400J-6TL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 64MBIT PAR 54TSOP II |
|
CY15B108QI-20LPXICypress Semiconductor |
IC FRAM 8MBIT SPI 20MHZ 8GQFN |
|
IS61NLF51218A-7.5TQLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
24FC16-I/SNRoving Networks / Microchip Technology |
IC EEPROM 16KBIT I2C 1MHZ 8SOIC |
|
24LC01BHT-E/OTRoving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C SOT23-5 |
