类型 | 描述 |
---|---|
系列: | FL-L |
包裹: | Tray |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 128Mb (16M x 8) |
内存接口: | SPI - Quad I/O, QPI |
时钟频率: | 133 MHz |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-SOIC (0.209", 5.30mm Width) |
供应商设备包: | 8-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
71V67603S150PFGI8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
TC58NVG2S0HTAI0Toshiba Memory America, Inc. (Kioxia America, Inc.) |
IC FLASH 4GBIT PARALLEL 48TSOP I |
|
SST39VF1681-70-4C-B3KERoving Networks / Microchip Technology |
IC FLASH 16MBIT PARALLEL 48TFBGA |
|
MX25L3206EZNI-12GMacronix |
IC FLASH 32MBIT SPI 86MHZ 8WSON |
|
CY7C1019CV33-10ZXCTRochester Electronics |
STANDARD SRAM, 128KX8 |
|
AT28HC256E-12UM/883Roving Networks / Microchip Technology |
IC EEPROM 256KBIT PAR 28CPGA |
|
R1LP0408DSB-5SI#S1Renesas Electronics America |
IC SRAM 4MBIT PARALLEL 32TSOP II |
|
W25Q20EWSVIG TRWinbond Electronics Corporation |
IC FLASH 2MBIT SPI 104MHZ 8VSOP |
|
CAT24C02VP2I-GT3Rochester Electronics |
IC EEPROM 2KBIT I2C 400KHZ 8TDFN |
|
71T75602S100BGGRenesas Electronics America |
IC SRAM 18MBIT PARALLEL 119PBGA |
|
SST25VF020-20-4C-SAE-TRoving Networks / Microchip Technology |
IC FLASH 2MBIT SPI 20MHZ 8SOIC |
|
AS6C4016-55BINTRAlliance Memory, Inc. |
IC SRAM 4MBIT PARALLEL 48TFBGA |
|
NM24C05UNRochester Electronics |
IC EEPROM 4KBIT I2C 100KHZ 8DIP |