类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 1Mb (128K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 10ms |
访问时间: | 150 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | -55°C ~ 125°C (TC) |
安装类型: | Through Hole |
包/箱: | 32-CDIP (0.600", 15.24mm) |
供应商设备包: | 32-CDIP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CY62137EV30LL-45BVXIRochester Electronics |
STANDARD SRAM, 128KX16, 45NS PBG |
|
MX29LV400CTTI-70GMacronix |
IC FLASH 4MBIT PARALLEL 48TSOP |
|
CY7C140-45DMBRochester Electronics |
DUAL-PORT SRAM, 1KX8 |
|
S29GL01GS10DHA023Cypress Semiconductor |
IC FLASH 1GBIT PARALLEL 64FBGA |
|
IS25LP256D-JMLE-TRISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 256MBIT SPI/QUAD 16SOIC |
|
24LC00-I/STRoving Networks / Microchip Technology |
IC EEPROM 128B I2C 400KHZ 8TSSOP |
|
S29GL032N11TFIV23Cypress Semiconductor |
IC FLASH 32MBIT PARALLEL 56TSOP |
|
93C66BT-E/SNRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 2MHZ 8SOIC |
|
S34MS02G200GHI000Rochester Electronics |
IC FLASH 2GBIT PARALLEL 67BGA |
|
IS64WV51216BLL-10CTLA3-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 8MBIT PARALLEL 44TSOP II |
|
UPD44647186AF5-E30-FQ1Rochester Electronics |
STANDARD SRAM, 4MX18, 0.45NS |
|
S25FL512SAGMFI010Cypress Semiconductor |
IC FLASH 512MBIT SPI/QUAD 16SOIC |
|
MT46V32M16CY-5B IT:J TRMicron Technology |
IC DRAM 512MBIT PARALLEL 60FBGA |