类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Asynchronous |
内存大小: | 16Kb (4K x 4) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 35ns |
访问时间: | 35 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Through Hole |
包/箱: | 20-DIP (0.300", 7.62mm) |
供应商设备包: | 20-DIP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
M24C04-DRMF3TG/KSTMicroelectronics |
IC EEPROM 4KBIT I2C 1MHZ 8MLP |
|
93LC56AT-I/SNRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 2MHZ 8SOIC |
|
71V124SA10YRochester Electronics |
IC SRAM 1MBIT PARALLEL 32SOJ |
|
CY7C1313TV18-250BZCRochester Electronics |
IC SRAM 18MBIT PARALLEL 165FBGA |
|
AT25DF081A-MH-TAdesto Technologies |
IC FLASH 8MBIT SPI 100MHZ 8UDFN |
|
IS43LR32800G-6BLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 90TFBGA |
|
CAT24C03YI-GRochester Electronics |
IC EEPROM 2KBIT I2C 8TSSOP |
|
71V67603S133BQ8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 165CABGA |
|
N28F512200Rochester Electronics |
64K X 8 FLASH 12V PROM |
|
CY7C1562XV18-366BZXCRochester Electronics |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
AT28C010-20LM/883Rochester Electronics |
IC EEPROM 1MBIT PARALLEL 44CLCC |
|
IS62WV5128EBLL-45T2LI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4MBIT PARALLEL 32TSOP II |
|
BR24C08A-10TU-2.7ROHM Semiconductor |
IC EEPROM 8KBIT I2C 8TSSOP |