类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH |
内存大小: | 4Mb (512K x 8) |
内存接口: | SPI |
时钟频率: | 104 MHz |
写周期时间 - 字,页: | 8µs, 2.5ms |
访问时间: | - |
电压 - 电源: | 1.65V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TC) |
安装类型: | Surface Mount |
包/箱: | 8-SOIC (0.154", 3.90mm Width) |
供应商设备包: | 8-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
TE28F800B3B110Rochester Electronics |
FLASH, 512KX16, 110NS, PDSO48 |
|
BR24G128F-3AGTE2ROHM Semiconductor |
IC EEPROM 128KBIT I2C 1MHZ 8SOP |
|
S29GL01GT10DHI023Cypress Semiconductor |
IC FLASH 1GBIT PARALLEL 64FBGA |
|
CY14B101LA-BA25XITCypress Semiconductor |
IC NVSRAM 1MBIT PARALLEL 48FBGA |
|
CAT24C64WI-GSanyo Semiconductor/ON Semiconductor |
IC EEPROM 64KBIT I2C 1MHZ 8SOIC |
|
AT25XV021A-MHV-TAdesto Technologies |
IC FLASH 2MBIT SPI 70MHZ 8UDFN |
|
71V2556S133PFGI8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
70V631S10BCG8Renesas Electronics America |
IC SRAM 4.5MBIT PAR 256CABGA |
|
S29JL064J70BHI000Cypress Semiconductor |
IC FLASH 64MBIT PARALLEL 48FBGA |
|
RMLV0414EGSB-4S2#AA1Renesas Electronics America |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
CY7C1372KV33-200AXCCypress Semiconductor |
IC SRAM 18MBIT PARALLEL 100TQFP |
|
93LC46CT-I/SNRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 3MHZ 8SOIC |
|
AT25XE021A-XMHN-BAdesto Technologies |
IC FLASH 2MBIT SPI 70MHZ 8TSSOP |