类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Dual Port, Asynchronous |
内存大小: | 32Kb (4K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 25ns |
访问时间: | 25 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 52-LCC (J-Lead) |
供应商设备包: | 52-PLCC (19.13x19.13) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
W25Q64JWSSIQWinbond Electronics Corporation |
IC FLASH 64MBIT SPI/QUAD 8SOIC |
|
CY7C1041CV33-12VCRochester Electronics |
STANDARD SRAM, 256KX16 |
|
FT93C46A-USR-BFremont Micro Devices |
IC EEPROM 1KBIT SPI 2MHZ 8SOP |
|
24LC024T-I/MNYRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 400KHZ 8TDFN |
|
BR25020-10TU-2.7ROHM Semiconductor |
IC EEPROM 2KBIT SPI 3MHZ 8TSSOP |
|
R1LP0408DSP-7SI#B0Renesas Electronics America |
IC SRAM 4MBIT PARALLEL 32SOP |
|
R1LV3216RSD-7SI#B0Rochester Electronics |
STANDARD SRAM, 2MX16, 70NS |
|
70V3389S5BFI8Renesas Electronics America |
IC SRAM 1.125MBIT PAR 208CABGA |
|
CY7C1019BV33-15VCRochester Electronics |
STANDARD SRAM, 128KX8 |
|
BR93H76RF-2LBH2ROHM Semiconductor |
IC EEPROM 8KBIT SPI 2MHZ 8SOP |
|
CAT64LC40YI-GT3Rochester Electronics |
IC EEPROM 4KBIT SPI 1MHZ 8TSSOP |
|
S-25C2560I-J8T1U4ABLIC U.S.A. Inc. |
IC EEPROM 256KBIT SPI 10MHZ 8SOP |
|
71V3577S75BGGI8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |