English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Obsolete |
| 内存类型: | Non-Volatile |
| 内存格式: | EEPROM |
| 技术: | EEPROM |
| 内存大小: | 2Kb (256 x 8) |
| 内存接口: | I²C |
| 时钟频率: | 100 kHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | - |
| 电压 - 电源: | 2.5V ~ 6.0V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-SOIC (0.154", 3.90mm Width) |
| 供应商设备包: | 8-SO |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
93LC66BT/SNRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 2MHZ 8SOIC |
|
CY7C1440KV33-250AXCCypress Semiconductor |
IC SRAM 36MBIT PARALLEL 100TQFP |
|
AS7C1025B-10TJCNAlliance Memory, Inc. |
IC SRAM 1MBIT PARALLEL 32SOJ |
|
71V65603S100BGRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 119PBGA |
|
GD25Q64CYIGRGigaDevice |
IC FLASH 64MBIT SPI/QUAD 8WSON |
|
CY14E512Q1A-SXIRochester Electronics |
NON-VOLATILE SRAM, 64KX8, CMOS, |
|
IS42S32160F-75ETL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PAR 86TSOP II |
|
S25FL164K0XMFV010Flip Electronics |
IC FLASH 64MBIT SPI/QUAD 8SOIC |
|
MR1A16AMYS35Everspin Technologies, Inc. |
IC RAM 2MBIT PARALLEL 44TSOP2 |
|
93LC76CT-E/SNRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 3MHZ 8SOIC |
|
BR25G640NUX-3TRROHM Semiconductor |
IC EEPROM 64KBIT VSON008X2030 |
|
IS43TR16128C-125KBL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 96TWBGA |
|
CY7C21701KV18-400BZXCRochester Electronics |
IC SRAM 18MBIT PARALLEL 165FBGA |
