类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 4Kb (512 x 8) |
内存接口: | SPI |
时钟频率: | 2 MHz |
写周期时间 - 字,页: | 6ms |
访问时间: | - |
电压 - 电源: | 1.8V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-TSSOP (0.173", 4.40mm Width) |
供应商设备包: | 8-TSSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
24AA014-I/STRoving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C 8TSSOP |
|
FT93C66A-USR-TFremont Micro Devices |
IC EEPROM 4KBIT SPI 2MHZ 8SOP |
|
CY7C1021D-10VXITCypress Semiconductor |
IC SRAM 1MBIT PARALLEL 44SOJ |
|
71V67803S150PFGI8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
70T651S12BF8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 208CABGA |
|
CY7C0831AV-133BBXIRochester Electronics |
IC SRAM 2MBIT PARALLEL 144FBGA |
|
CY7C1615KV18-333BZXCRochester Electronics |
QDR SRAM, 4MX36, 0.45NS PBGA165 |
|
IS45S32200L-7TLA1ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 64MBIT PAR 86TSOP II |
|
UPD46365094BF1-E40-EQ1-ARochester Electronics |
QDR SRAM, 4MX9, 0.45NS |
|
CY7C1371D-133BGCRochester Electronics |
IC SRAM 18MBIT PARALLEL 119PBGA |
|
AT25256B-SSHL-TRoving Networks / Microchip Technology |
IC EEPROM 256KBIT SPI 8SOIC |
|
MX29LV040CTI-70GMacronix |
IC FLASH 4MBIT PARALLEL 32TSOP |
|
24AA044-E/PRoving Networks / Microchip Technology |
IC EEPROM 4KBIT I2C 1MHZ 8DIP |