类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Not For New Designs |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 256b (32 x 8) |
内存接口: | 1-Wire® |
时钟频率: | - |
写周期时间 - 字,页: | - |
访问时间: | 15 µs |
电压 - 电源: | - |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Through Hole |
包/箱: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
供应商设备包: | TO-92-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
BQ4016MC-70Rochester Electronics |
IC NVSRAM 8MBIT PAR 36DIP MODULE |
|
CY7C1564XV18-450BZCRochester Electronics |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
AT25FF321A-MHN-TAdesto Technologies |
IC FLASH 32MBIT SPI/QUAD 8UDFN |
|
S29GL512T11TFV010Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 56TSOP |
|
MT29F4G08ABAFAWP-AIT:F TRMicron Technology |
IC FLASH 4GBIT PARALLEL 48TSOP I |
|
FM93C46LZEMT8XRochester Electronics |
EEPROM, 64X16, SERIAL, CMOS |
|
CY7C0832AV-133BBCRochester Electronics |
DUAL-PORT SRAM, 256KX18, 4NS |
|
S29GL064N11TFIV13Cypress Semiconductor |
IC FLASH 64MBIT PARALLEL 56TSOP |
|
S-93C76AFT-TB-GABLIC U.S.A. Inc. |
IC EEPROM 8KBIT SPI 2MHZ 8TSSOP |
|
24LC01BT-E/MSRoving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C 400KHZ 8MSOP |
|
AT25XE041B-MHN-YAdesto Technologies |
IC FLASH 4MBIT SPI 85MHZ 8UDFN |
|
71V67603S133BQGI8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 165CABGA |
|
MT47H32M16NF-25E AAT:HMicron Technology |
IC DRAM 512MBIT PARALLEL 84FBGA |