类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Synchronous, QDR II+ |
内存大小: | 72Mb (4M x 18) |
内存接口: | Parallel |
时钟频率: | 400 MHz |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 1.7V ~ 1.9V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 165-LBGA |
供应商设备包: | 165-FBGA (13x15) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CY62146ELL-45ZSXATRochester Electronics |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
24LC16BT-M/SNRoving Networks / Microchip Technology |
IC EEPROM 16KBIT I2C 8SOIC |
|
CY62147GN30-45B2XICypress Semiconductor |
IC SRAM 4MBIT PARALLEL 48VFBGA |
|
IS46TR16128C-125KBLA2ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 96TWBGA |
|
AT25SF641B-SHB-TAdesto Technologies |
IC FLASH 64MBIT SPI/QUAD 8SOIC |
|
AT45DB081E-MHN2B-TAdesto Technologies |
IC FLASH 8MBIT SPI 85MHZ 8UDFN |
|
7134LA70CBRenesas Electronics America |
IC SRAM 32KBIT PARALLEL SB48 |
|
24LC256T-I/SNRoving Networks / Microchip Technology |
IC EEPROM 256KBIT I2C 8SOIC |
|
CY7S1041G30-10BVXIRochester Electronics |
IC SRAM 4MBIT PARALLEL 48VFBGA |
|
W971GG6SB25I TRWinbond Electronics Corporation |
IC DRAM 1GBIT PARALLEL 84WBGA |
|
24LC04BH-E/SNRoving Networks / Microchip Technology |
IC EEPROM 4KBIT I2C 400KHZ 8SOIC |
|
70V639S12BCI8Renesas Electronics America |
IC SRAM 2.25MBIT PAR 256CABGA |
|
S29GL064N11FFIS32Cypress Semiconductor |
IC FLASH 64MBIT PARALLEL 64FBGA |