类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Dual Port, Asynchronous |
内存大小: | 16Kb (2K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 45ns |
访问时间: | 45 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 52-QFP |
供应商设备包: | 52-PQFP (10x10) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
![]() |
MT25QU256ABA8ESF-0SIT TRMicron Technology |
IC FLASH 256MBIT SPI 133MHZ 16SO |
![]() |
CY7C1049GN-10VXICypress Semiconductor |
IC SRAM 4MBIT PARALLEL 36SOJ |
![]() |
NM24C04LNRochester Electronics |
IC EEPROM 4KBIT I2C 100KHZ 8DIP |
![]() |
CY7C1411KV18-250BZCRochester Electronics |
IC SRAM 36MBIT PARALLEL 165FBGA |
![]() |
W631GU8MB-15 TRWinbond Electronics Corporation |
IC DRAM 1GBIT PARALLEL 78VFBGA |
![]() |
CY621472E30LL-45ZSXIRochester Electronics |
IC SRAM 4MBIT PARALLEL 44TSOP II |
![]() |
MB85RS64TUPN-G-AMEWE1Fujitsu Electronics America, Inc. |
IC FRAM 64KBIT SPI 10MHZ 8SON |
![]() |
S29WS256PABBAW000Cypress Semiconductor |
IC FLASH 256MBIT PARALLEL 84FBGA |
![]() |
U62256AS2C07LLG1TRAlliance Memory, Inc. |
IC SRAM 256KBIT PARALLEL 28SOP |
![]() |
CAT24C05YI-GRochester Electronics |
IC EEPROM 4KBIT I2C 8TSSOP |
![]() |
UPD46364362BF1-E40-EQ1-ARochester Electronics |
DDR SRAM, 1MX36, 0.45NS |
![]() |
93LC56AXT-E/SNRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 2MHZ 8SOIC |
![]() |
11LC080-E/PRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SINGLE WIRE 8DIP |