类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Dual Port, Synchronous |
内存大小: | 2Mb (64K x 36) |
内存接口: | Parallel |
时钟频率: | 133 MHz |
写周期时间 - 字,页: | - |
访问时间: | 4.2 ns |
电压 - 电源: | 3.15V ~ 3.45V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 256-LBGA |
供应商设备包: | 256-CABGA (17x17) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MR25H40MDFEverspin Technologies, Inc. |
IC RAM 4MBIT SPI 40MHZ 8DFN |
|
W25Q80EWUXIE TRWinbond Electronics Corporation |
IC FLASH 8MBIT SPI 104MHZ 8USON |
|
MX29GL128FHT2I-90GMacronix |
IC FLASH 128MBIT PARALLEL 56TSOP |
|
IS46DR16160B-25DBLA2ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 84TWBGA |
|
S29GL512P10TFIR20Flip Electronics |
IC FLASH 512MBIT PARALLEL 56TSOP |
|
S29AL016J55TFI020Rochester Electronics |
IC FLASH 16MBIT PARALLEL 48TSOP |
|
SM662PEB BDS ST602Silicon Motion |
FERRI EMMC 10GB 3D TLC + EXT. TE |
|
CY7C1415KV18-250BZXICypress Semiconductor |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
70V3579S6BFRenesas Electronics America |
IC SRAM 1.125MBIT PAR 208CABGA |
|
70T3519S133BF8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 208CABGA |
|
24LC32AT-E/MNYRoving Networks / Microchip Technology |
IC EEPROM 32KBIT I2C 8TDFN |
|
SFEM008GB1EA1TO-I-GE-121-STDSwissbit |
IC FLASH 64GBIT EMMC 153BGA |
|
FT24C08A-ETG-TFremont Micro Devices |
IC EEPROM 8KBIT I2C 1MHZ 8TSSOP |