类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 2Kb (256 x 8) |
内存接口: | I²C |
时钟频率: | 400 kHz |
写周期时间 - 字,页: | 5ms |
访问时间: | 900 ns |
电压 - 电源: | 1.5V ~ 3.6V |
工作温度: | -20°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-TSSOP (0.173", 4.40mm Width) |
供应商设备包: | 8-TSSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
EM02APYD4-BA000-2 |
2GB EMMC PSLC 11.5X13X1.0 153 BA |
|
W25N01GVZEIG TRWinbond Electronics Corporation |
IC FLASH 1GBIT SPI 104MHZ 8WSON |
|
S25FL256LDPMFI000Cypress Semiconductor |
IC FLASH 256MBIT SPI/QUAD 16SOIC |
|
GD25VQ20CEIGRGigaDevice |
IC FLASH 2MBIT SPI/QUAD 8USON |
|
S25FL127SABMFI001Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 16SOIC |
|
70V3319S133BFI8Renesas Electronics America |
IC SRAM 4.5MBIT PAR 208CABGA |
|
24AA01T-I/MNYRoving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C 400KHZ 8TDFN |
|
IS42S32200L-6BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 64MBIT PARALLEL 90TFBGA |
|
24LC04B-I/MCRoving Networks / Microchip Technology |
IC EEPROM 4KBIT I2C 400KHZ 8DFN |
|
24AA024H-I/MSRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 400KHZ 8MSOP |
|
MT58L512L18FS-10Rochester Electronics |
CACHE SRAM 512KX18 10NS PQFP100 |
|
S25FL064LABNFB010Cypress Semiconductor |
IC FLASH 64MBIT SPI/QUAD 8WSON |
|
CY621472G30-45ZSXITCypress Semiconductor |
IC SRAM 4MBIT PARALLEL 44TSOP II |