类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 2Kb (256 x 8) |
内存接口: | I²C |
时钟频率: | 400 kHz |
写周期时间 - 字,页: | 5ms |
访问时间: | 900 ns |
电压 - 电源: | 1.5V ~ 3.6V |
工作温度: | -20°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-SOIC (0.154", 3.90mm Width) |
供应商设备包: | 8-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IS43R16320F-6BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 60TFBGA |
|
0418A86LQKA-7Rochester Electronics |
8MBIT (512K X 18) SRAM |
|
CY7C1347S-133AXCRochester Electronics |
IC SRAM 4.5MBIT 133MHZ 100LQFP |
|
CAT24C02ZI-GT3ARochester Electronics |
IC EEPROM 2KBIT I2C 400KHZ 8MSOP |
|
24LCS52T/STRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 8TSSOP |
|
CY7C146-35NCRochester Electronics |
DUAL-PORT SRAM, 2KX8, 35NS |
|
IS42RM32400H-6BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PARALLEL 90TFBGA |
|
CY7C4142KV13-933FCXCRochester Electronics |
QDR SRAM, 4MX36 PBGA361 |
|
11LC020-E/MSRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SGL WIRE 8MSOP |
|
TE28F800B5B90Rochester Electronics |
FLASH, 1MX8, 90NS, PDSO48 |
|
7038L15PFG8Renesas Electronics America |
IC SRAM 1.125MBIT PAR 100TQFP |
|
FM24C256FLM8Rochester Electronics |
IC EEPROM 256KBIT I2C 400KHZ 8SO |
|
MR256A08BYS35REverspin Technologies, Inc. |
IC RAM 256KBIT PARALLEL 44TSOP2 |