类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q100, GL-S |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 64Mb (8M x 8, 4M x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 60ns |
访问时间: | 80 ns |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 105°C (TA) |
安装类型: | Surface Mount |
包/箱: | 48-TFSOP (0.724", 18.40mm Width) |
供应商设备包: | 48-TSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
STK17T88-RF25Rochester Electronics |
IC NVSRAM 256KBIT PAR 48SSOP |
|
11AA160T-I/MSRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SGL WIRE 8MSOP |
|
CY7C1049G30-10ZSXICypress Semiconductor |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
IS43R16320D-6TL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PAR 66TSOP II |
|
BR24G16NUX-3TTRROHM Semiconductor |
IC EEPROM 16KBIT VSON008X2030 |
|
AT25XE011-MAHN-TAdesto Technologies |
IC FLASH 1MBIT SPI 104MHZ 8UDFN |
|
AS4C128M8D2A-25BINAlliance Memory, Inc. |
IC DRAM 1GBIT PARALLEL 60FBGA |
|
IS61NLP102418B-250B3LIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 165TFBGA |
|
TC58BVG0S3HTA00Toshiba Memory America, Inc. (Kioxia America, Inc.) |
IC FLASH 1GBIT PARALLEL 48TSOP I |
|
CY62256NLL-70ZXCRochester Electronics |
STANDARD SRAM, 32KX8, 70NS |
|
AS7C34098A-20TINAlliance Memory, Inc. |
IC SRAM 4MBIT PARALLEL 44TSOP2 |
|
70V657S10BFG8Renesas Electronics America |
IC SRAM 1.125MBIT PAR 208FPBGA |
|
93LC86A-E/SNRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 3MHZ 8SOIC |