English
简体中文
CAP TANT 15UF 20% 10V 2312
TVS DIODE 70V 113V DO215AA
IC DRAM 1GBIT PARALLEL 84TWBGA
COAX MINI RG-59 PLENUM 75 OHM
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Not For New Designs |
| 内存类型: | Volatile |
| 内存格式: | DRAM |
| 技术: | SDRAM - DDR2 |
| 内存大小: | 1Gb (64M x 16) |
| 内存接口: | Parallel |
| 时钟频率: | 333 MHz |
| 写周期时间 - 字，页: | 15ns |
| 访问时间: | 450 ps |
| 电压 - 电源: | 1.7V ~ 1.9V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 84-TFBGA |
| 供应商设备包: | 84-TWBGA (8x12.5) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
24LC32AFT-I/MSRoving Networks / Microchip Technology |
IC EEPROM 32KBIT I2C 8MSOP |
|
25LC256-E/MFRoving Networks / Microchip Technology |
IC EEPROM 256KBIT SPI 10MHZ 8DFN |
|
MR256A08BCYS35REverspin Technologies, Inc. |
IC RAM 256KBIT PARALLEL 44TSOP2 |
|
24AA32AFT-I/SNRoving Networks / Microchip Technology |
IC EEPROM 32KBIT I2C 8SOIC |
|
BR24G08FVT-3GE2ROHM Semiconductor |
IC EEPROM 8KBIT I2C 8TSSOPB |
|
W9725G8KB25IWinbond Electronics Corporation |
IC DRAM 256MBIT PARALLEL 60WBGA |
|
71256SA20YG8Renesas Electronics America |
IC SRAM 256KBIT PARALLEL 28SOJ |
|
W948D2FBJX5EWinbond Electronics Corporation |
IC DRAM 256MBIT PARALLEL 90VFBGA |
|
93LC66B-E/MSRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 2MHZ 8MSOP |
|
IS46R16320D-6BLA2-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 60TFBGA |
|
M24C16-RMC6TGSTMicroelectronics |
IC EEPROM 16KBIT I2C 400KHZ 8MLP |
|
M24C08-DRMF3TG/KSTMicroelectronics |
IC EEPROM 8KBIT I2C 1MHZ 8MLP |
|
N25S830HAS22ITRochester Electronics |
IC SRAM 256KBIT SPI 20MHZ 8SOIC |