类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Synchronous, SDR (ZBT) |
内存大小: | 9Mb (256K x 36) |
内存接口: | Parallel |
时钟频率: | 100 MHz |
写周期时间 - 字,页: | - |
访问时间: | 5 ns |
电压 - 电源: | 3.135V ~ 3.465V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 100-LQFP |
供应商设备包: | 100-TQFP (14x20) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
SST26WF080BT-104I/SNRoving Networks / Microchip Technology |
IC FLASH 8MBIT SPI/QUAD 8SOIC |
|
25LC160CT-I/MNYRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 10MHZ 8TDFN |
|
70T3599S166BC8Renesas Electronics America |
IC SRAM 4.5MBIT PAR 256CABGA |
|
W9425G6KH-5I TRWinbond Electronics Corporation |
IC DRAM 256MBIT PAR 66TSOP II |
|
CY62157EV30LL-45BVXATCypress Semiconductor |
IC SRAM 8MBIT PARALLEL 48VFBGA |
|
24AA014T-I/MSRoving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C 400KHZ 8MSOP |
|
CYD02S36VA-167BBXCRochester Electronics |
IC SRAM 2MBIT PARALLEL 256FBGA |
|
W987D2HBJX7EWinbond Electronics Corporation |
IC DRAM 128MBIT PARALLEL 90VFBGA |
|
CY7C1268KV18-550BZXCRochester Electronics |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
CY62147G30-55BVXETCypress Semiconductor |
IC SRAM 4MBIT PARALLEL 48VFBGA |
|
AT27LV040A-12VIRoving Networks / Microchip Technology |
IC EPROM 4MBIT PARALLEL 32VSOP |
|
BR24T16FV-WE2ROHM Semiconductor |
IC EEPROM 16K I2C 400KHZ 8SSOPB |
|
IS25WP128-RMLE-TRISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 128MBIT SPI 16SOIC |