English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Asynchronous |
| 内存大小: | 3Mb (128K x 24) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 10ns |
| 访问时间: | 10 ns |
| 电压 - 电源: | 3V ~ 3.6V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 100-LQFP |
| 供应商设备包: | 100-TQFP (14x20) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
S25FL064LABBHV033Cypress Semiconductor |
IC FLASH 64MBIT SPI/QUAD 24BGA |
|
11LC020T-E/MSRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SGL WIRE 8MSOP |
|
AS4C16M16SA-6TINTRAlliance Memory, Inc. |
IC DRAM 256MBIT PAR 54TSOP II |
|
MR4A16BCMA35REverspin Technologies, Inc. |
IC RAM 16MBIT PARALLEL 48FBGA |
|
11LC080T-I/MSRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SGL WIRE 8MSOP |
|
MT49H32M18CSJ-18:BMicron Technology |
IC DRAM 576MBIT PARALLEL 144FBGA |
|
CY7C1426KV18-250BZCTCypress Semiconductor |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
24AA02E48T-E/SNRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 400KHZ 8SOIC |
|
CY7C4021KV13-600FCXCRochester Electronics |
IC SRAM 72MBIT PARALLEL 361FCBGA |
|
25AA320A-I/MSRoving Networks / Microchip Technology |
IC EEPROM 32KBIT SPI 10MHZ 8MSOP |
|
CAT28LV64G20Rochester Electronics |
IC EEPROM 64KBIT PARALLEL 32PLCC |
|
71V3576YS150PFRochester Electronics |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
S71KS512SC0BHV000Cypress Semiconductor |
IC FLASH RAM 512MBIT PAR 24FBGA |
