类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 16Kb (2K x 8) |
内存接口: | I²C |
时钟频率: | 400 kHz |
写周期时间 - 字,页: | 5ms |
访问时间: | - |
电压 - 电源: | 1.6V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-TSSOP (0.173", 4.40mm Width) |
供应商设备包: | 8-TSSOP-B |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
GD25D05CTIGGigaDevice |
IC FLASH 512KBIT SPI/DUAL 8SOP |
|
IS43R16160F-6BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 60TFBGA |
|
CY7C1381KVE33-133AXITCypress Semiconductor |
IC SRAM 18MBIT PARALLEL 100TQFP |
|
7142LA35CBRenesas Electronics America |
IC SRAM 16KBIT PARALLEL SB48 |
|
BR24G02FJ-3AGTE2ROHM Semiconductor |
IC EEPROM 2KBIT I2C 1MHZ 8SOPJ |
|
S711E20E0VFUE3Rochester Electronics |
8-BIT MCU, 20K EPROM, 768 RAM |
|
S29GL064N90DAI040Cypress Semiconductor |
IC FLASH 64MBIT PARALLEL 64FBGA |
|
W9825G2JB-6 TRWinbond Electronics Corporation |
IC DRAM 256MBIT PARALLEL 90TFBGA |
|
GS8256436GD-400IGSI Technology |
IC SRAM 288MBIT PAR 165FPBGA |
|
N64S830HAS22ISanyo Semiconductor/ON Semiconductor |
IC SRAM 64KBIT SPI 20MHZ 8SOIC |
|
AT25SF081-MAHD-TAdesto Technologies |
IC FLASH 8MBIT SPI 104MHZ 8UDFN |
|
63S281NLRochester Electronics |
63S281 - OTP ROM, 256X8, 45NS |
|
MX30LF1208AA-XKIMacronix |
IC FLSH 512MBIT PARALLEL 63VFBGA |