English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | EEPROM |
| 技术: | EEPROM |
| 内存大小: | 4Kb (256 x 8 x 2) |
| 内存接口: | I²C |
| 时钟频率: | 1 MHz |
| 写周期时间 - 字，页: | 5ms |
| 访问时间: | 450 ns |
| 电压 - 电源: | 1.7V ~ 5.5V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-SOIC (0.154", 3.90mm Width) |
| 供应商设备包: | 8-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
M95M01-DWDW3TP/KSTMicroelectronics |
IC EEPROM 1MBIT SPI 16MHZ 8TSSOP |
|
AT45DB021E-SHNHC-TAdesto Technologies |
IC FLASH 2MBIT SPI 70MHZ 8SOIC |
|
DS1230Y-70Rochester Electronics |
IC NVSRAM 256KBIT PAR 28EDIP |
|
93C76CT-E/MNYRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 3MHZ 8TDFN |
|
IS43DR16640C-3DBLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 84TWBGA |
|
IS42S86400D-6TL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PAR 54TSOP II |
|
BR93G76NUX-3BTTRROHM Semiconductor |
IC EEPROM 8K SPI VSON008X2030 |
|
MT29F1G08ABAEAWP-ITX:E TRMicron Technology |
IC FLASH 1GBIT PARALLEL 48TSOP I |
|
S25FS256SAGMFI000Cypress Semiconductor |
IC FLASH 256MBIT SPI/QUAD 16SOIC |
|
CY62167DV30LL-70BVXIRochester Electronics |
STANDARD SRAM, 1MX16 |
|
AT25XV041B-UUV-TAdesto Technologies |
IC FLASH 4MBIT SPI 85MHZ 8WLCSP |
|
24AA32AX-I/STRoving Networks / Microchip Technology |
IC EEPROM 32KBIT I2C 8TSSOP |
|
IS43LQ32128A-062BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 4GBIT PARALLEL 200VFBGA |
