English
简体中文
IC DRAM 512MBIT PARALLEL 54TFBGA
IC DRVR 4 SEGMENT 16SO
PRESSURE SWITCHES
890-940 MHZ 5 DB ELEVATED FEED G
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | DRAM |
| 技术: | SDRAM |
| 内存大小: | 512Mb (32M x 16) |
| 内存接口: | Parallel |
| 时钟频率: | 167 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | 5.4 ns |
| 电压 - 电源: | 3V ~ 3.6V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 54-TFBGA |
| 供应商设备包: | 54-TFBGA (8x13) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
71V65803S100BGGIRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 119PBGA |
|
25AA080/SNRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 1MHZ 8SOIC |
|
23LC512-E/SNRoving Networks / Microchip Technology |
IC SRAM 512KBIT SPI/QUAD 8SOIC |
|
GD25VQ20CSIGRGigaDevice |
IC FLASH 2MBIT SPI/QUAD I/O 8SOP |
|
TMS55160-60DGHRochester Electronics |
VIDEO DRAM, 256KX16, 60NS PDSO64 |
|
S25FL128SAGBHIY00Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 24BGA |
|
GD25LD20CUIGRGigaDevice |
IC FLSH 2MBIT SPI/DUAL I/O 8USON |
|
71V3558S133BGRochester Electronics |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
AT28C010-15JURoving Networks / Microchip Technology |
IC EEPROM 1MBIT PARALLEL 32PLCC |
|
SST38VF6402B-70I/CDRoving Networks / Microchip Technology |
IC FLASH 64MBIT PARALLEL 48TFBGA |
|
93LC56CXT-I/SNRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 3MHZ 8SOIC |
|
70V7599S133BC8Renesas Electronics America |
IC SRAM 4.5MBIT PAR 256CABGA |
|
27S21DM/BRochester Electronics |
OTP ROM, 256X4, 60NS, TTL CDIP16 |