类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Synchronous, Standard |
内存大小: | 288Mb (8M x 36) |
内存接口: | Parallel |
时钟频率: | 200 MHz |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 1.7V ~ 2V, 2.3V ~ 2.7V |
工作温度: | -40°C ~ 100°C (TJ) |
安装类型: | Surface Mount |
包/箱: | 165-LBGA |
供应商设备包: | 165-FPBGA (15x13) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
70V658S12BCIRenesas Electronics America |
IC SRAM 2MBIT PARALLEL 256CABGA |
|
MX25L1633EM2I-10GMacronix |
IC FLASH 16MBIT SPI 104MHZ 8SOP |
|
MT48LC16M16A2B4-6A AAT:G TRMicron Technology |
IC DRAM 256MBIT PARALLEL 54VFBGA |
|
IS42S83200G-7BL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 54TFBGA |
|
AS7C34096A-20TINAlliance Memory, Inc. |
IC SRAM 4MBIT PARALLEL 44TSOP2 |
|
BR24G32FV-3AGTE2ROHM Semiconductor |
IC EEPROM 32KBIT I2C 1MHZ 8SSOPB |
|
CY7C1351B-100AIRochester Electronics |
128KX36 3.3V NOBL SYNC-FT SRAM ( |
|
IS25WP256D-JMLE-TRISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 256MBIT SPI/QUAD 16SOIC |
|
SST25VF040B-50-4I-SAF-TRoving Networks / Microchip Technology |
IC FLASH 4MBIT SPI 50MHZ 8SOIC |
|
MX25R512FM1IL0Macronix |
IC FLASH 512KBIT SPI/QUAD 8SOP |
|
24FC08T-E/MSRoving Networks / Microchip Technology |
IC EEPROM 8KBIT I2C 1MHZ 8MSOP |
|
25AA640AT-I/STRoving Networks / Microchip Technology |
IC EEPROM 64KBIT SPI 8TSSOP |
|
S29GL032N90FFA023Rochester Electronics |
IC FLASH 32MBIT PARALLEL 64FBGA |