类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | NVSRAM |
技术: | NVSRAM (Non-Volatile SRAM) |
内存大小: | 1Mb (128K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 70ns |
访问时间: | 70 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Through Hole |
包/箱: | 32-DIP Module (0.600", 15.24mm) |
供应商设备包: | 32-EDIP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CAT25C128V-1.8Rochester Electronics |
IC EEPROM 128KBIT SPI 5MHZ 8SOIC |
|
MT58L128L36P1F-5Rochester Electronics |
IC SRAM 4MBIT PARALLEL 165FBGA |
|
93LC56C-E/SNRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 3MHZ 8SOIC |
|
70V3579S4BCGRenesas Electronics America |
IC SRAM 1.125MBIT PAR 256CABGA |
|
S29GL064S70BHI043Cypress Semiconductor |
IC FLASH 64MBIT PARALLEL 48FBGA |
|
CAT93C76VGI-T3Rochester Electronics |
IC EEPROM 8KBIT SPI 3MHZ 8SOIC |
|
BR93L86F-WE2ROHM Semiconductor |
IC EEPROM 16KBIT SPI 2MHZ 8SOP |
|
CY7C1518KV18-333BZIRochester Electronics |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
W631GG6KB-12 TRWinbond Electronics Corporation |
IC DRAM 1GBIT PARALLEL 96WBGA |
|
M95640-WMN6PSTMicroelectronics |
IC EEPROM 64KBIT SPI 20MHZ 8SO |
|
25AA256T-E/STRoving Networks / Microchip Technology |
IC EEPROM 256KBIT SPI 8TSSOP |
|
AT28HC256E-12TU-TRoving Networks / Microchip Technology |
IC EEPROM 256KBIT PAR 28TSSOP |
|
SFEM4096B1EA1TO-I-GE-12P-STDSwissbit |
IC FLASH 32GBIT EMMC 153BGA |