类型 | 描述 |
---|---|
系列: | SST25 |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH |
内存大小: | 2Mb (256K x 8) |
内存接口: | SPI |
时钟频率: | 33 MHz |
写周期时间 - 字,页: | 20µs |
访问时间: | - |
电压 - 电源: | 3V ~ 3.6V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-WDFN Exposed Pad |
供应商设备包: | 8-WSON |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IS64WV6416EEBLL-10CTLA3ISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 1MBIT PARALLEL 44TSOP II |
|
CAT24C512HU5EGT3Rochester Electronics |
EEPROM, 64KX8, SERIAL, CMOS, PDS |
|
24FC04HT-I/OTRoving Networks / Microchip Technology |
IC EEPROM 4KBIT I2C 1MHZ SOT23-5 |
|
25LC128XT-I/STRoving Networks / Microchip Technology |
IC EEPROM 128KBIT SPI 8TSSOP |
|
24LC64-E/PRoving Networks / Microchip Technology |
IC EEPROM 64KBIT I2C 400KHZ 8DIP |
|
XC68HC908GP20CFBRochester Electronics |
TSG 8BIT20K FLASH |
|
NM25C040LVM8Rochester Electronics |
EEPROM, 512X8, SERIAL, CMOS |
|
IS49RL18320-125BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 576MBIT PAR 168FCBGA |
|
AT25XE512C-MAHN-TAdesto Technologies |
IC FLASH 512KBIT SPI 8UDFN |
|
IS64WV102416BLL-10MLA3-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 16MBIT PAR 48MINIBGA |
|
S29GL01GS11DHSS20Cypress Semiconductor |
IC FLASH 1GBIT PARALLEL 64FBGA |
|
AS7C38098A-10BINAlliance Memory, Inc. |
IC SRAM 8MBIT PARALLEL 48TFBGA |
|
7134LA25JGI8Renesas Electronics America |
IC SRAM 32KBIT PARALLEL 52PLCC |