类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Not For New Designs |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - DDR |
内存大小: | 512Mb (32M x 16) |
内存接口: | Parallel |
时钟频率: | 166 MHz |
写周期时间 - 字,页: | 15ns |
访问时间: | 700 ps |
电压 - 电源: | 2.3V ~ 2.7V |
工作温度: | -40°C ~ 105°C (TA) |
安装类型: | Surface Mount |
包/箱: | 60-TFBGA |
供应商设备包: | 60-TFBGA (8x13) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CAT24C512WI-GT3Sanyo Semiconductor/ON Semiconductor |
IC EEPROM 512KBIT I2C 1MHZ 8SOIC |
|
93LC56AX-E/SNRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 2MHZ 8SOIC |
|
24LC16B-I/SNRoving Networks / Microchip Technology |
IC EEPROM 16KBIT I2C 8SOIC |
|
S25FL128SAGNFV000Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 8WSON |
|
MX25L6406EMI-12GMacronix |
IC FLASH 64MBIT SPI 86MHZ 16SOP |
|
24LC64FT-E/MNYRoving Networks / Microchip Technology |
IC EEPROM 64KBIT I2C 8TDFN |
|
DS1245Y-85+Maxim Integrated |
IC NVSRAM 1MBIT PARALLEL 32EDIP |
|
CY7C1518KV18-300BZXCRochester Electronics |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
CAV24C256YE-GT3Rochester Electronics |
IC EEPROM 256KBIT I2C 8TSSOP |
|
CAV93C76VE-GT3Rochester Electronics |
IC EEPROM 8KBIT SPI 2MHZ 8SOIC |
|
IS42S16800F-7TLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PAR 54TSOP II |
|
AT24MAC402-SSHM-BRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 1MHZ 8SOIC |
|
71V67603S150BGI8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 119PBGA |