类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Asynchronous |
内存大小: | 1Mb (128K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 55ns |
访问时间: | 55 ns |
电压 - 电源: | 2.7V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 36-TFBGA |
供应商设备包: | 36-TFBGA (6x8) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CY7C199D-10VXICypress Semiconductor |
IC SRAM 256KBIT PARALLEL 28SOJ |
|
CAT93C56WI-GRochester Electronics |
IC EEPROM 2KBIT SPI 2MHZ 8SOIC |
|
MT41K256M8DA-125 IT:K TRMicron Technology |
IC DRAM 2GBIT PARALLEL 78FBGA |
|
CY7C1345S-100AXCTCypress Semiconductor |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
DS1330WP-150Rochester Electronics |
IC NVSRAM 256KBIT PAR 34PWRCAP |
|
IS42S32200L-6TLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 64MBIT PAR 86TSOP II |
|
BQ4010YMA-85NRochester Electronics |
IC NVSRAM 64KBIT PARALLEL 28DIP |
|
71V67903S85BQ8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 165CABGA |
|
BR24L32FV-WE2ROHM Semiconductor |
IC EEPROM 32KBIT I2C 8SSOPB |
|
IS45S16160J-7BLA1ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 54TFBGA |
|
S29GL256P90FFCR10Cypress Semiconductor |
IC FLASH 256MBIT PARALLEL 64FBGA |
|
AS7C34096B-10BINTRAlliance Memory, Inc. |
IC SRAM 4MBIT PARALLEL 36TFBGA |
|
BR24C08-WMN6TPROHM Semiconductor |
IC EEPROM 8KBIT I2C 400KHZ 8SO |