类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NAND |
内存大小: | 1Gb (1G x 1) |
内存接口: | SPI |
时钟频率: | - |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 63-VFBGA |
供应商设备包: | 63-VFBGA (9x11) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CY62128BNLL-70SXETRochester Electronics |
IC SRAM 1MBIT 70NS 32SOIC |
|
IS43LR32640A-5BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 90WBGA |
|
24LC128T-E/SNRoving Networks / Microchip Technology |
IC EEPROM 128KBIT I2C 8SOIC |
|
CY7C0851V-133BBCRochester Electronics |
DUAL-PORT SRAM, 64KX36 |
|
S25FL512SDSMFBG11Cypress Semiconductor |
IC FLASH 512MBIT SPI/QUAD 16SOIC |
|
FM24C32ULM8XRochester Electronics |
IC EEPROM 32KBIT I2C 8SOIC |
|
CYD18S72V18-200BGXIFlip Electronics |
IC SRAM 18MBIT PARALLEL 484FBGA |
|
CAT25040VP2I-GT3Rochester Electronics |
IC EEPROM 4KBIT SPI 10MHZ 8TDFN |
|
71V67803S150BQ8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 165CABGA |
|
GD25LQ80CSIGRGigaDevice |
IC FLASH 8MBIT SPI/QUAD I/O 8SOP |
|
24AA512T-I/ST14Roving Networks / Microchip Technology |
IC EEPROM 512KBIT I2C 14TSSOP |
|
AT28C256F-15FM/883Roving Networks / Microchip Technology |
IC EEPROM 256KBIT PAR 28FLATPK |
|
AS4C4M16SA-6TANAlliance Memory, Inc. |
IC DRAM 64MBIT PAR 54TSOP II |