类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Asynchronous |
内存大小: | 4Mb (256K x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 12ns |
访问时间: | 12 ns |
电压 - 电源: | 3V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 44-BSOJ (0.400", 10.16mm Width) |
供应商设备包: | 44-SOJ |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CY62157EV30LL-55ZSXERochester Electronics |
IC SRAM 8MBIT PARALLEL 44TSOP II |
|
CAT93C46RWI-GRochester Electronics |
IC EEPROM 1KBIT SPI 4MHZ 8SOIC |
|
IS61C25616AS-25TLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
CY62138FLL-45SXIRochester Electronics |
STANDARD SRAM, 256KX8, 45NS, CMO |
|
AT25010B-MAHL-ERoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 20MHZ 8UDFN |
|
7164L25YG8Renesas Electronics America |
IC SRAM 64KBIT PARALLEL 28SOJ |
|
IS43DR86400C-3DBL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 60TWBGA |
|
24LC024T-E/MNYRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 400KHZ 8TDFN |
|
71V547S100PFG8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
7014S12PFG8Renesas Electronics America |
IC SRAM 36KBIT PARALLEL 64TQFP |
|
S34MS02G200TFI003Flip Electronics |
IC FLASH 2GBIT PARALLEL 48TSOP I |
|
71256SA15TPGIRenesas Electronics America |
IC SRAM 256KBIT PARALLEL 28DIP |
|
7130LA25JGIRenesas Electronics America |
IC SRAM 8KBIT PARALLEL 52PLCC |