English
简体中文
IC DRAM 256MBIT PAR 86TSOP II
TAPE ALUM FOIL SILVER 1"X 5YDS
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | DRAM |
| 技术: | SDRAM |
| 内存大小: | 256Mb (8M x 32) |
| 内存接口: | Parallel |
| 时钟频率: | 166 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | 5.4 ns |
| 电压 - 电源: | 3V ~ 3.6V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 86-TFSOP (0.400", 10.16mm Width) |
| 供应商设备包: | 86-TSOP II |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
71V016SA10BFRochester Electronics |
IC SRAM 1MBIT PARALLEL 48CABGA |
|
IS42SM32200M-75BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 64MBIT PARALLEL 90TFBGA |
|
W25Q16JWSNIMWinbond Electronics Corporation |
IC FLASH 16MBIT SPI/QUAD 8SOIC |
|
AT25SF128A-SHB-TAdesto Technologies |
IC FLASH 128MBIT SPI/QUAD 8SOIC |
|
MX25L12836EZNI-10GMacronix |
IC FLSH 128MBIT SPI 104MHZ 8WSON |
|
W9725G6KB25IWinbond Electronics Corporation |
IC DRAM 256MBIT PARALLEL 84WBGA |
|
24C01C-E/MCRoving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C 100KHZ 8DFN |
|
AT28C010-12DM/883Roving Networks / Microchip Technology |
IC EEPROM 1MBIT PARALLEL 32CDIP |
|
CY7C1413TV18-167BZCRochester Electronics |
SYNC RAM |
|
24FC02T-E/SNRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 1MHZ 8SOIC |
|
IS46R16160D-5TLA1-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 66TSOP II |
|
IS42S16320F-6BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 54TFBGA |
|
71V416S15PHGIRenesas Electronics America |
IC SRAM 4MBIT PARALLEL 44TSOP II |