类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - Mobile LPSDR |
内存大小: | 256Mb (8M x 32) |
内存接口: | Parallel |
时钟频率: | 166 MHz |
写周期时间 - 字,页: | 15ns |
访问时间: | 5.4 ns |
电压 - 电源: | 1.7V ~ 1.95V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 90-TFBGA |
供应商设备包: | 90-VFBGA (8x13) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IS61DDP2B41M36A-400M3LISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 36MBIT PARALLEL 165LFBGA |
|
47L16-E/STRoving Networks / Microchip Technology |
IC EERAM 16KBIT I2C 1MHZ 8TSSOP |
|
CYDMX128A16-65BVXIRochester Electronics |
DUAL-PORT SRAM, 8KX16, 65NS PBGA |
|
M5M51008DKV-70HIBTRochester Electronics |
SRAM CHIP ASYNC SINGLE 5V 1M-BIT |
|
S25FL512SAGMFV010Cypress Semiconductor |
IC FLASH 512MBIT SPI/QUAD 16SOIC |
|
FM25V01-GTRFlip Electronics |
IC FRAM 128KBIT SPI 40MHZ 8SOIC |
|
AS7C32098A-15TINTRAlliance Memory, Inc. |
IC SRAM 2MBIT PARALLEL 44TSOP2 |
|
IS61LPS51236B-200B3LIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 165TFBGA |
|
RM24C128C-LTAI-TAdesto Technologies |
IC CBRAM 128KBIT I2C 1MHZ 8TSSOP |
|
NM24C65ULENRochester Electronics |
IC EEPROM 64KBIT I2C 100KHZ 8DIP |
|
S29GL128S10FHB010Cypress Semiconductor |
IC FLASH 128MBIT PARALLEL 64FBGA |
|
34VL02T/OTRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C SOT23-6 |
|
71V67602S150PFGIRochester Electronics |
IC SRAM 9MBIT PARALLEL 100TQFP |