







SSD 3.84TB U.2 64L TLC NVME 12V
IC VREF SHUNT 18V 0.5% SOT25
IC FLASH 384GBIT PAR 132VBGA
RF FET NCHA 125V SOT121B
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Not For New Designs |
| 内存类型: | Non-Volatile |
| 内存格式: | FLASH |
| 技术: | FLASH - NAND |
| 内存大小: | 384Gb (48G x 8) |
| 内存接口: | Parallel |
| 时钟频率: | 333 MHz |
| 写周期时间 - 字,页: | - |
| 访问时间: | - |
| 电压 - 电源: | 2.5V ~ 3.6V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 132-VBGA |
| 供应商设备包: | 132-VBGA (12x18) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
AT28C010E-15JURoving Networks / Microchip Technology |
IC EEPROM 1MBIT PARALLEL 32PLCC |
|
|
IS46R16160F-6TLA2ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 66TSOP II |
|
|
CY7C1474V33-167BGCRochester Electronics |
IC SRAM 72MBIT PARALLEL 209FBGA |
|
|
71V424L12YGRenesas Electronics America |
IC SRAM 4MBIT PARALLEL 36SOJ |
|
|
71V65803S150BGI8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 119PBGA |
|
|
W29GL512SH9T TRWinbond Electronics Corporation |
IC FLASH 512MBIT PARALLEL 56TSOP |
|
|
IS64LF12832A-7.5TQLA3-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4MBIT PARALLEL 100TQFP |
|
|
IS34MW04G084-TLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 4GBIT PARALLEL 48TSOP |
|
|
93C66BT-I/STRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 2MHZ 8TSSOP |
|
|
CY7C1414BV18-167BZCRochester Electronics |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
|
S34ML02G100TFV003Flip Electronics |
IC FLASH 2GBIT PARALLEL 48TSOP I |
|
|
24LC00/PRoving Networks / Microchip Technology |
IC EEPROM 128B I2C 400KHZ 8DIP |
|
|
24VL025/PRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 400KHZ 8DIP |