类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Asynchronous |
内存大小: | 512Kb (32K x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 20ns |
访问时间: | 20 ns |
电压 - 电源: | 3V ~ 3.6V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 44-TSOP (0.400", 10.16mm Width) |
供应商设备包: | 44-TSOP2 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IS61NLP51218B-200TQLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 9MBIT PARALLEL 100LQFP |
|
DS1225AB-200INDRochester Electronics |
IC NVSRAM 64KBIT PARALLEL 28EDIP |
|
71T75802S100PFGRochester Electronics |
1M X 18, SYNCHRONOUS ZBT SRAM |
|
IS43TR16128BL-125KBL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 96TWBGA |
|
MR3A16ACYS35Everspin Technologies, Inc. |
IC RAM 8MBIT PARALLEL 54TSOP2 |
|
CY14B101K-SP35XIRochester Electronics |
IC NVSRAM 1MBIT PARALLEL 48SSOP |
|
FM28V020-T28GRochester Electronics |
IC FRAM 256KBIT PAR 28TSOP I |
|
IS42RM16800H-6BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PARALLEL 54TFBGA |
|
34AA02-I/MSRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 400KHZ 8MSOP |
|
MT28F010-20/BRochester Electronics |
MEMORY IC |
|
MX25R512FBFIL0Macronix |
IC FLASH 512KBIT SPI/QUAD 8WLCSP |
|
DS1221S/T&RRochester Electronics |
NONVOLATILE MEMORY POWER MANAGEM |
|
CY7C1520KV18-333BZCRochester Electronics |
IC SRAM 72MBIT PARALLEL 165FBGA |