English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Synchronous, DDR II |
| 内存大小: | 18Mb (512K x 36) |
| 内存接口: | Parallel |
| 时钟频率: | 200 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | - |
| 电压 - 电源: | 1.7V ~ 1.9V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 165-LBGA |
| 供应商设备包: | 165-FBGA (13x15) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
CY7C1357S-100AXCRochester Electronics |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
CY7C1061G-10BVXICypress Semiconductor |
IC SRAM 16MBIT PARALLEL 48VFBGA |
|
BR93G56F-3AGTE2ROHM Semiconductor |
IC EEPROM 2KBIT SPI 3MHZ 8SOP |
|
24LC21A-I/PRoving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C 400KHZ 8DIP |
|
CY7C1339A-66ACRochester Electronics |
128K X 32 SYNCHRONOUS BURST SRAM |
|
CY7C1399B-10VCRochester Electronics |
CACHE SRAM, 32KX8, 10NS PDSO28 |
|
IS62WV1288FBLL-45TLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 1MBIT PARALLEL 32TSOP I |
|
043641QLAD-5Rochester Electronics |
256KX18 SRAM |
|
71V424S15YGI8Renesas Electronics America |
IC SRAM 4MBIT PARALLEL 36SOJ |
|
BR24G01NUX-3ATTRROHM Semiconductor |
IC EEPROM 1K I2C VSON008X2030 |
|
IS43LR16640A-5BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 60TWBGA |
|
24LC16BT-E/MCRoving Networks / Microchip Technology |
IC EEPROM 16KBIT I2C 400KHZ 8DFN |
|
CY7C1347A-133ACRochester Electronics |
STANDARD SRAM, 128KX36 |
