类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 1Kb (64 x 16) |
内存接口: | SPI |
时钟频率: | 2 MHz |
写周期时间 - 字,页: | 6ms |
访问时间: | - |
电压 - 电源: | 2.5V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
供应商设备包: | 8-MSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AS4C8M16D1A-5TINAlliance Memory, Inc. |
IC DRAM 128MBIT PAR 66TSOP II |
|
AS4C512M8D3A-12BCNAlliance Memory, Inc. |
IC DRAM 4GBIT PARALLEL 78FBGA |
|
GD25WD40CTIGGigaDevice |
IC FLASH 4MBIT SPI/QUAD I/O 8SOP |
|
CAT25160YI-GT3Sanyo Semiconductor/ON Semiconductor |
IC EEPROM 16KBIT SPI 8TSSOP |
|
AT24C04C-MAHM-TRoving Networks / Microchip Technology |
IC EEPROM 4KBIT I2C 1MHZ 8UDFN |
|
71256SA20YGIRenesas Electronics America |
IC SRAM 256KBIT PARALLEL 28SOJ |
|
AM27C512-150JIRochester Electronics |
OTP ROM, 64KX8, 150NS, CMOS, PQC |
|
RMLV3216AGSD-5S2#HA0Renesas Electronics America |
IC SRAM 32MBIT PAR 52TSOP II |
|
71V65603S100BGIRochester Electronics |
IC SRAM 9MBIT PARALLEL 119PBGA |
|
AS4C16M16SA-6BINTRAlliance Memory, Inc. |
IC DRAM 256MBIT PARALLEL 54TFBGA |
|
S29GL512T12DHVV10Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 64FBGA |
|
MTFC8GLWDQ-3L AIT ZMicron Technology |
IC FLASH 64GBIT MMC 100LBGA |
|
S25FL256LAGMFA003Cypress Semiconductor |
IC FLASH 256MBIT SPI/QUAD 16SOIC |