English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | DRAM |
| 技术: | SDRAM |
| 内存大小: | 64Mb (4M x 16) |
| 内存接口: | Parallel |
| 时钟频率: | 166 MHz |
| 写周期时间 - 字，页: | 2ns |
| 访问时间: | 5.4 ns |
| 电压 - 电源: | 3V ~ 3.6V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 54-TSOP (0.400", 10.16mm Width) |
| 供应商设备包: | 54-TSOP II |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IS42S16100H-7BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 16MBIT PARALLEL 60TFBGA |
|
CY7C1620KV18-250BZXCCypress Semiconductor |
IC SRAM 144MBIT PARALLEL 165FBGA |
|
CY14MB064J2A-SXIRochester Electronics |
IC NVSRAM 64KBIT I2C 8SOIC |
|
AT45DB021E-SSHNHA-TAdesto Technologies |
IC FLASH 2MBIT SPI 70MHZ 8SOIC |
|
CY7C1525KV18-333BZCRochester Electronics |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
71V3577S75BGGIRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
71V3556S100PFGRochester Electronics |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
AT27LV520-90XURoving Networks / Microchip Technology |
IC EPROM 512KBIT PAR 20TSSOP |
|
AS4C4M32SA-6TINAlliance Memory, Inc. |
IC DRAM 128MBIT PAR 86TSOP II |
|
IS43LD16640C-18BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 134TFBGA |
|
SST39VF1602-70-4C-B3KE-TRoving Networks / Microchip Technology |
IC FLASH 16MBIT PARALLEL 48TFBGA |
|
71V67603S150BQIRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 165CABGA |
|
SST26VF016B-104V/MFRoving Networks / Microchip Technology |
IC FLASH 16MBIT SPI/QUAD 8WDFN |
