类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | EPROM |
技术: | EPROM - OTP |
内存大小: | 1Kb (128 x 8) |
内存接口: | 1-Wire® |
时钟频率: | - |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 2.8V ~ 6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 4-UFBGA, WLBGA |
供应商设备包: | 4-WLP (1.62x0.93) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
24AA16T-I/MSRoving Networks / Microchip Technology |
IC EEPROM 16KBIT I2C 8MSOP |
|
24LC08BH-E/STRoving Networks / Microchip Technology |
IC EEPROM 8KBIT I2C 8TSSOP |
|
IS43R16320D-6TLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PAR 66TSOP II |
|
71V016SA20BFG8Rochester Electronics |
IC SRAM 1MBIT PARALLEL 48FBGA |
|
FT24C32A-ENR-TFremont Micro Devices |
IC EEPROM 32KBIT I2C 1MHZ 8DFN |
|
CY7C1313KV18-250BZCTCypress Semiconductor |
IC SRAM 18MBIT PARALLEL 165FBGA |
|
S25FL512SDPBHI213Cypress Semiconductor |
IC FLASH 512MBIT SPI/QUAD 24BGA |
|
DS1250AB-100Rochester Electronics |
IC NVSRAM 4MBIT PARALLEL 32EDIP |
|
MT29F1G01ABBFDWB-IT:FMicron Technology |
IC FLASH 1GBIT SPI 8UPDFN |
|
70T3339S133BFI8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 208CABGA |
|
CY7C291AL-50JCRochester Electronics |
OTP ROM, 2KX8, 50NS PQCC28 |
|
S25FL256LDPNFI011Cypress Semiconductor |
IC FLASH 256MBIT SPI/QUAD 8WSON |
|
IS46R16160F-5BLA1-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 60TFBGA |