类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Asynchronous |
内存大小: | 1Mb (64K x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 10ns |
访问时间: | 10 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 44-TSOP (0.400", 10.16mm Width) |
供应商设备包: | 44-TSOP II |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
71V67703S85BQI8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 165CABGA |
|
S25FL256LDPMFI001Cypress Semiconductor |
IC FLASH 256MBIT SPI/QUAD 16SOIC |
|
IS43LR32320B-6BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 64MBIT PARALLEL 90LFBGA |
|
25LC256T-H/SNRoving Networks / Microchip Technology |
IC EEPROM 256KBIT SPI 5MHZ 8SOIC |
|
CY7C1011CV33-10ZSXARochester Electronics |
IC SRAM 2MBIT PARALLEL 44TSOP II |
|
S29GL512S12TFVV20Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 56TSOP |
|
S34MS04G100BHI000Cypress Semiconductor |
IC FLASH 4GBIT PARALLEL 63BGA |
|
UPD44325084BF5-E40-FQ1Rochester Electronics |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
BR93G76FVM-3BGTTRROHM Semiconductor |
IC EEPROM 8K SPI 3MHZ 8MSOP |
|
AS7C3256A-10JCNTRAlliance Memory, Inc. |
IC SRAM 256KBIT PARALLEL 28SOJ |
|
MT46H16M32LFB5-6 AIT:C TRMicron Technology |
IC DRAM 512MBIT PARALLEL 90VFBGA |
|
24FC64F-I/STRoving Networks / Microchip Technology |
IC EEPROM 64KBIT I2C 1MHZ 8TSSOP |
|
CY7C1570XV18-600BZXCRochester Electronics |
IC SRAM 72MBIT PARALLEL 165FBGA |