English
简体中文
FIXED IND 6.8UH 5.6A 28 MOHM SMD
CRYSTAL 14.31818MHZ 18PF SMD
CONN JACK FMALE 11P SOLDER CUP
IC SRAM 36MBIT PARALLEL 165FBGA
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Synchronous, QDR II+ |
| 内存大小: | 36Mb (1M x 36) |
| 内存接口: | Parallel |
| 时钟频率: | 633 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | - |
| 电压 - 电源: | 1.7V ~ 1.9V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 165-LBGA |
| 供应商设备包: | 165-FBGA (13x15) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
W632GG6NB-15Winbond Electronics Corporation |
IC DRAM 2GBIT PARALLEL 96VFBGA |
|
CY62256LL-55SNXIRochester Electronics |
IC SRAM 256KBIT PARALLEL 28SOIC |
|
LE25U81AQETXGRochester Electronics |
IC FLASH 8MBIT SPI 8VDFN/VSONT |
|
MT44K16M36RB-107E:BMicron Technology |
IC DRAM 576MBIT PARALLEL 168BGA |
|
CY62256-70ZCTRochester Electronics |
STANDARD SRAM, 32KX8, 70NS |
|
70V3379S4PRFG8Renesas Electronics America |
IC SRAM 576KBIT PARALLEL 128TQFP |
|
CAT24FC64LIRochester Electronics |
IC EEPROM 64KBIT I2C 1MHZ 8DIP |
|
PCF85102C-2T/03,11Rochester Electronics |
IC EEPROM 2KBIT I2C 100KHZ 8SO |
|
IS42S32160F-6TL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PAR 86TSOP II |
|
EDB5432BEBH-1DAAT-F-R TRMicron Technology |
IC DRAM 512MBIT PAR 134VFBGA |
|
CY14E256L-SZ45XCRochester Electronics |
IC NVSRAM 256KBIT PAR 32SOIC |
|
BR24G256F-3GTE2ROHM Semiconductor |
IC EEPROM 256KBIT I2C 8SOP |
|
CY7C1370DV25-200BZCRochester Electronics |
IC SRAM 18MBIT PARALLEL 165FBGA |