







DIODE GEN PURP 800V 2A DO214AA
CONN MOD JACK 6P6C R/A UNSHLD
IC SRAM 1.125MBIT PAR 100TQFP
SENSOR 1500PSI 7/16-20UNF 4-20MA
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Dual Port, Asynchronous |
| 内存大小: | 1.125Mb (64K x 18) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字,页: | 15ns |
| 访问时间: | 15 ns |
| 电压 - 电源: | 4.5V ~ 5.5V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 100-LQFP |
| 供应商设备包: | 100-TQFP (14x14) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
SST25WF020A-40I/SNRoving Networks / Microchip Technology |
IC FLASH 2MBIT SPI 40MHZ 8SOIC |
|
|
24LC21T/SNRoving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C 400KHZ 8SOIC |
|
|
S29GL512S12DHIV20Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 64FBGA |
|
|
71V424L12PHRochester Electronics |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
|
AT24C16C-SSHM-TRoving Networks / Microchip Technology |
IC EEPROM 16KBIT I2C 1MHZ 8SOIC |
|
|
CY7C1041CV33-12BACRochester Electronics |
STANDARD SRAM, 256KX16 |
|
|
IS25WP256D-JLLEISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 256MBIT SPI/QUAD 8WSON |
|
|
S25FL128LAGBHB020Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 24BGA |
|
|
CY7C1041B-20ZXCRochester Electronics |
STANDARD SRAM, 256KX16, 20NS |
|
|
AT25SF081B-SSHD-BAdesto Technologies |
IC FLASH 8MBIT SPI QUAD 8SOIC |
|
|
S-34TS04L0B-A8T5U5ABLIC U.S.A. Inc. |
IC EEPROM 4KBIT I2C 1MHZ 8DFN |
|
|
GS832036AGT-250IGSI Technology |
IC SRAM 36MBIT PARALLEL 100TQFP |
|
|
CY14B101Q2A-SXITCypress Semiconductor |
IC NVSRAM 1MBIT SPI 40MHZ 8SOIC |