类型 | 描述 |
---|---|
系列: | FL-S |
包裹: | Tray |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 256Mb (32M x 8) |
内存接口: | SPI - Quad I/O |
时钟频率: | 66 MHz |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 16-SOIC (0.295", 7.50mm Width) |
供应商设备包: | 16-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CY7C1041GN-10ZSXITCypress Semiconductor |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
CY62157CV18LL-55BAIRochester Electronics |
STANDARD SRAM, 512KX16, 55NS |
|
AS6C6416-55TINAlliance Memory, Inc. |
IC SRAM 64MBIT PARALLEL 48TSOP I |
|
S29GL01GT12DHVV13Cypress Semiconductor |
IC FLASH 1GBIT PARALLEL 64FBGA |
|
25LC640AT-I/STRoving Networks / Microchip Technology |
IC EEPROM 64KBIT SPI 8TSSOP |
|
70V7599S166BCRenesas Electronics America |
IC SRAM 4.5MBIT PAR 256CABGA |
|
DS1245AB-120+Maxim Integrated |
IC NVSRAM 1MBIT PARALLEL 32EDIP |
|
BR24A01AF-WME2ROHM Semiconductor |
IC EEPROM 1KBIT I2C 400KHZ 8SOP |
|
IS46TR16640ED-15HBLA2ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 96TWBGA |
|
71V3577S75BGI8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
93C86CT-I/MCRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 3MHZ 8DFN |
|
71V65603S133PFG8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
93LC76CT-I/MSRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 3MHZ 8MSOP |