English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | MX30LF |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | FLASH |
| 技术: | FLASH - NAND |
| 内存大小: | 1Gb (128M x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 20ns |
| 访问时间: | 20 ns |
| 电压 - 电源: | 2.7V ~ 3.6V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 63-VFBGA |
| 供应商设备包: | 63-VFBGA (9x11) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
CAV25128YE-GT3Rochester Electronics |
IC EEPROM 128KBIT SPI 8TSSOP |
|
S34MS01G200TFI900Cypress Semiconductor |
IC FLASH 1GBIT PARALLEL 48TSOP I |
|
CY7C1041BV33-12VCTRochester Electronics |
STANDARD SRAM, 256KX16 |
|
S29GL512S11TFB020Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 56TSOP |
|
AT28C010-25FM/883Roving Networks / Microchip Technology |
IC EEPROM 1MBIT PAR 32FLATPACK |
|
PY7C1041CV33-20ZIRochester Electronics |
CACHE SRAM, 128KX36, 4NS, |
|
IS43TR16640CL-125JBLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 96TWBGA |
|
MT29F128G08CBCEBJ4-37ITR:EMicron Technology |
IC FLASH 128GBIT PAR 132VBGA |
|
CAT28C64BT13I-15Rochester Electronics |
IC EEPROM 64KBIT PARALLEL 28TSOP |
|
IS42S16800F-7TLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PAR 54TSOP II |
|
CY7C1320KV18-333BZCRochester Electronics |
IC SRAM 18MBIT PARALLEL 165FBGA |
|
CY7C1355C-100BGCRochester Electronics |
IC SRAM 9MBIT PARALLEL 119PBGA |
|
ACE1502EM8Rochester Electronics |
8-BIT, EEPROM, ACE1502 CPU |
