类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - DDR3 |
内存大小: | 4Gb (256M x 16) |
内存接口: | Parallel |
时钟频率: | 800 MHz |
写周期时间 - 字,页: | 15ns |
访问时间: | 20 ns |
电压 - 电源: | 1.425V ~ 1.575V |
工作温度: | 0°C ~ 95°C (TC) |
安装类型: | Surface Mount |
包/箱: | 96-TFBGA |
供应商设备包: | 96-TWBGA (9x13) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AT24C08BY6-YH-TRochester Electronics |
IC EEPROM 8KBIT I2C 8MINI MAP |
|
GVT71256E18T-9Rochester Electronics |
STANDARD SRAM, 256KX18 |
|
24LC16BH-I/SNRoving Networks / Microchip Technology |
IC EEPROM 16KBIT I2C 8SOIC |
|
S79FL512SDSMFVG01Cypress Semiconductor |
IC FLASH 512MBIT SPI/QUAD 16SOIC |
|
S-25C512A0I-T8T1U4ABLIC U.S.A. Inc. |
IC EEPROM 512KBIT SPI 8TSSOP |
|
CAT93C56PIRochester Electronics |
IC EEPROM 2KBIT SPI 2MHZ 8DIP |
|
CAT28F001T-90BRochester Electronics |
IC FLASH 1MBIT PARALLEL 32TSOP |
|
CY7C1319CV18-250BZCRochester Electronics |
IC SRAM 18MBIT PARALLEL 165FBGA |
|
CAT93C56VI-GRochester Electronics |
IC EEPROM 2KBIT SPI 2MHZ 8SOIC |
|
FM25CL64B-G2Rochester Electronics |
FRAM MEMORY CIRCUIT, 8KX8, CMOS |
|
71V416S15BEGIRenesas Electronics America |
IC SRAM 4MBIT PARALLEL 48CABGA |
|
24LC16B-E/MSRoving Networks / Microchip Technology |
IC EEPROM 16KBIT I2C 8MSOP |
|
11LC080T-E/TTRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SGL WIRE SOT23-3 |