English
简体中文
IC RAM 1MBIT PARALLEL 44TSOP2
COMP O= .720,L= 2.50,W= .096
SENSOR 750PSI M12-1.0 6G .5-4.5V
CAP TRIM 2.5-11PF 200V CHAS MNT
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | RAM |
| 技术: | MRAM (Magnetoresistive RAM) |
| 内存大小: | 1Mb (64K x 16) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 35ns |
| 访问时间: | 35 ns |
| 电压 - 电源: | 3V ~ 3.6V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 44-TSOP (0.400", 10.16mm Width) |
| 供应商设备包: | 44-TSOP2 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
23K640T-E/STRoving Networks / Microchip Technology |
IC SRAM 64KBIT SPI 20MHZ 8TSSOP |
|
IS62WVS0648FBLL-20NLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 512KBIT SPI/QUAD 8SOIC |
|
11AA080T-I/TTRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SGL WIRE SOT23-3 |
|
CY7C1041BV33L-12ZXCRochester Electronics |
SRAM CHIP ASYNC SINGLE 3.3V 4M B |
|
24LC01B-E/MSRoving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C 400KHZ 8MSOP |
|
MX29LV400CTTI-55QMacronix |
IC FLASH 4MBIT PARALLEL 48TSOP |
|
71V35761SA166BQGRenesas Electronics America |
IC SRAM 4.5MBIT PAR 165CABGA |
|
24AA02T-I/SNRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 400KHZ 8SOIC |
|
IS42S81600F-6TLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PAR 54TSOP II |
|
MT40A1G8WE-075E AIT:B TRMicron Technology |
IC DRAM 8GBIT PARALLEL 78FBGA |
|
71V35761S200PFRochester Electronics |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
UPD46365184BF1-E33-EQ1-ARochester Electronics |
QDR SRAM, 2MX18, 0.45NS |
|
7006L20JGIRenesas Electronics America |
IC SRAM 128KBIT PARALLEL 68PLCC |