类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 1Kb (128 x 8) |
内存接口: | I²C |
时钟频率: | 100 kHz |
写周期时间 - 字,页: | 1.5ms |
访问时间: | 3500 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | -40°C ~ 125°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-TSSOP (0.173", 4.40mm Width) |
供应商设备包: | 8-TSSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CAT24C16C5ATRRochester Electronics |
IC EEPROM 16KBIT I2C 5WLCSP |
|
MT55V1MV18FT-10Rochester Electronics |
ZBT SRAM, 1MX18, 7.5NS PQFP100 |
|
S29GL256P90FFIR10ACypress Semiconductor |
IC FLASH 256MBIT PARALLEL 64FBGA |
|
70V3589S133BCRenesas Electronics America |
IC SRAM 2MBIT PARALLEL 256CABGA |
|
BU9891GUL-WE2ROHM Semiconductor |
IC EEPROM 4KBIT SPI VCSP50L1 |
|
CY7C1021B-15ZXCRochester Electronics |
IC SRAM 1MBIT PARALLEL 44TSOP II |
|
MT58L128L18PT-10Rochester Electronics |
CACHE SRAM, 128KX18, 5NS PQFP100 |
|
71V67603S150BGGIRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 119PBGA |
|
CY7C1011G30-10BAJXECypress Semiconductor |
IC SRAM 2MBIT PARALLEL 48FBGA |
|
CAV24C02WE-GT3Sanyo Semiconductor/ON Semiconductor |
IC EEPROM 2KBIT I2C 400KHZ 8SOIC |
|
SST26VF032BAT-104I/MFRoving Networks / Microchip Technology |
IC FLASH 32MBIT SPI/QUAD 8WDFN |
|
IS46TR16128C-15HBLA2ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 96TWBGA |
|
CY7C1520V18-200BZCRochester Electronics |
IC SRAM 72MBIT PARALLEL 165FBGA |