类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Asynchronous |
内存大小: | 256Kb (32K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 35ns |
访问时间: | 35 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | -55°C ~ 125°C (TA) |
安装类型: | Through Hole |
包/箱: | 28-CDIP (0.600", 15.24mm) |
供应商设备包: | 28-CerDip |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
25LC320AT-I/SNRoving Networks / Microchip Technology |
IC EEPROM 32KBIT SPI 10MHZ 8SOIC |
|
R1EX24128ASAS0A#S0Rochester Electronics |
EEPROM, 16KX8, SERIAL |
|
AT28HC64B-90SURoving Networks / Microchip Technology |
IC EEPROM 64KBIT PARALLEL 28SOIC |
|
IS61C3216AL-12TLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 512KBIT PAR 44TSOP II |
|
CY7C1520AV18-250BZCRochester Electronics |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
FM24C64FLZM8Rochester Electronics |
IC EEPROM 64KBIT I2C 8SOIC |
|
S34ML02G104BHA013Rochester Electronics |
IC FLASH 2GBIT PARALLEL 63BGA |
|
RM25C64DS-LTAI-TAdesto Technologies |
IC CBRAM 64KBIT SPI 20MHZ 8TSSOP |
|
24LC64FT-I/OTRoving Networks / Microchip Technology |
IC EEPROM 64KBIT I2C SOT23-5 |
|
IS25LQ025B-JKLEISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 256KBIT SPI/QUAD 8WSON |
|
71T75602S150BGRenesas Electronics America |
IC SRAM 18MBIT PARALLEL 119PBGA |
|
GS8160Z36DGT-250IGSI Technology |
IC SRAM 18MBIT PARALLEL 100TQFP |
|
CY7C1061G30-10BVJXICypress Semiconductor |
IC SRAM 16MBIT PARALLEL 48VFBGA |