类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Asynchronous |
内存大小: | 256Kb (32K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 15ns |
访问时间: | 15 ns |
电压 - 电源: | 3V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 28-BSOJ (0.300", 7.62mm Width) |
供应商设备包: | 28-SOJ |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
25AA128-I/SNRoving Networks / Microchip Technology |
IC EEPROM 128KBIT SPI 8SOIC |
|
IS25LP128-JKLE-TRISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 128MBIT SPI/QUAD 8WSON |
|
R1LP0108ESN-5SI#B1Renesas Electronics America |
IC SRAM 1MBIT PARALLEL 32SOP |
|
71V67703S75PFG8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
S25FL164K0XNFIQ11Cypress Semiconductor |
IC FLASH 64MBIT SPI/QUAD 8WSON |
|
W631GG6MB12I TRWinbond Electronics Corporation |
IC DRAM 1GBIT PARALLEL 96VFBGA |
|
AS7C1024B-12TCNTRAlliance Memory, Inc. |
IC SRAM 1MBIT PARALLEL 32TSOP I |
|
S29GL512T11FHIV43Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 64FBGA |
|
93LC56/PRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 2MHZ 8DIP |
|
2102-1NRochester Electronics |
SRAM, 1KX1, 500NS, MOS, PDIP16 |
|
BR25L020FV-WE2ROHM Semiconductor |
IC EEPROM 2KBIT SPI 5MHZ 8SSOPB |
|
CY62138FLL-45SXITCypress Semiconductor |
IC SRAM 2MBIT PARALLEL 32SOIC |
|
CY7C199D-10VXITCypress Semiconductor |
IC SRAM 256KBIT PARALLEL 28SOJ |